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SBH3050

SBH3050

  • 厂商:

    SEMIKRON( 赛米控)

  • 封装:

  • 描述:

    SBH3050 - High temperature schottky barrier diodes - Semikron International

  • 数据手册
  • 价格&库存
SBH3050 数据手册
SBH 3020 ... SBH 3060 Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage Max. forward voltage VRRM V SBH 3020 SBH 3030 20 30 40 45 50 60 VRSM V 20 30 40 45 50 60 trr1) ns - VF2) V 0,43 0,43 0,43 0,43 0,53 0,53 VF3) V 0,6 0,6 0,6 0,6 0,7 0,7 Axial Lead Diode High temperature schottky barrier diodes Forward Current: 30 A Reverse Voltage: 20 to 60 V SBH 3020 ... SBH 3060 Preliminary Data Features • Max. solder temperature: 260°C • Plastic material has UL classification 94V-0 SBH 3040 SBH 3045 SBH 3050 SBH 3060 Absolute Maximum Ratings Symbol IFAV IFRM IFSM i2t Tj Tj Tstg Conditions R-load, 4), Ta = 50 °C f > 15 Hz, 4) half sinus-wave Ta = 25 °C Ta = 25 °C tp = 10 ms tp = 8.3 ms tp = 10 ms tp = 8.3 ms Values 30 90 700 2450 -50 ... +175 -50 ... +200 -50 ... +175 Unit A A A A A²s A²s °C °C °C Ta = 25 °C, unless otherwise specified Operating junction temperature DC forward (bypass) mode 5) Storage temperature Typical Applications* • Designed as Bypass Diodes for Solar Panels • Protection application Mechanical Data • Plastic case: 8 x 7,5 [mm] • Weight approx.: 2,4 g • Terminals: plated terminals solderable per MIL-STD-750 • Mounting position: any • Standard packaging: 500 pieces per ammo or 1000 pieces per reel Characteristics Symbol IR IR Cj ERSM Rth(j-a) Rth(j-L) Conditions Tj = 25 °C, VR = VRRM Tj = 100 °C, VR = VRRM at 1 MHz and applied reverse voltage of 4 V L = 60 mH, Tj = 25 °C, inductive load switched off 4) 6) min. typ. max. 150 Unit µA mA pF mJ Ta = 25 °C, unless otherwise specified 2.5 Footnotes IF = - A, IR = - A, IRR = - A 2) I = 5 A, T = 25 °C F j 3) IF = 30 A, Tj = 25 °C 4) Valid, if leads are kept at TA at a distance of 0 mm from case 5) Max. junction temperature Tj ≤175 °C in reverse mode (VR = 80% VRRM) in reverse mode, Tj≤ 200 °C in bypass mode 6) Thermal resistance from junction to lead/ terminal at distance 0 mm from case 1) K/W K/W Diode © by SEMIKRON Rev. 2 – 06.05.2011 1 SBH 3020 ... SBH 3060 Fig.1: Forward characteristics (typical value) Fig.2: Rated forward current vs. ambient temperature 1) Fig.3: Thermal resistance versus distance from case Case: 8 x 7,5 [mm] 2 Rev. 2 – 06.05.2011 © by SEMIKRON SBH 3020 ... SBH 3060 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 2 – 06.05.2011 3
SBH3050 价格&库存

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