SEMIX101GD066HDS_08

SEMiX101GD066HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V Tj = 150 °C VCES ≤ 600 V VGES tpsc Tj = 175 °C Tc = 25 °C Tc = 80 °C 600 139 105 100 200 -20 ... 20 6 -40 ... 175 Tc = 25 °C Tc = 80 °C 151 111 100 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 200 500 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX®13 Trench IGBT Modules SEMiX101GD066HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Tj = 175 °C Typical Applications • Matrix Converter • Resonant Inverter • Current Source Inverter Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 100 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 6.2 0.38 0.18 800 2.00 140 35 3 440 55 4 0.41 1.45 1.70 0.9 0.85 5.5 8.5 5.8 0.15 1.9 2.1 1 0.9 9.0 12.0 6.5 0.45 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W K/W Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance Conditions min. typ. max. Unit VGE=VCE, IC = 1.6 mA VGE = 0 V VCE = 600 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 300 V IC = 100 A Tj = 150 °C RG on = 6.2 Ω RG off = 6.2 Ω GD © by SEMIKRON Rev. 13 – 02.12.2008 1 SEMiX101GD066HDs Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IRRM Qrr Err Rth(j-c) SEMiX101GD066HDs min. typ. 1.4 1.4 max. 1.6 1.6 1.1 0.95 5.0 6.5 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 100 A VGE = 0 V chiplevel VF0 rF 0.9 0.75 3.0 4.5 1 0.85 4.0 5.5 130 18 4.5 SEMiX®13 Trench IGBT Modules IF = 100 A Tj = 150 °C di/dtoff = 3200 A/µs T = 150 °C j VGE = -8 V Tj = 150 °C VCC = 300 V per diode per diode 0.51 K/W K/W Rth(j-s) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 20 res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 °C TC = 125 °C 0.7 1 0.04 5 5 350 0,493 ±5% 3550 ±2% nH mΩ mΩ K/W Nm Nm Nm g Typical Applications • Matrix Converter • Resonant Inverter • Current Source Inverter Temperature sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; kΩ K Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance GD 2 Rev. 13 – 02.12.2008 © by SEMIKRON SEMiX101GD066HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic © by SEMIKRON Rev. 13 – 02.12.2008 3 SEMiX101GD066HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 13 – 02.12.2008 © by SEMIKRON SEMiX101GD066HDs SEMiX 13 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 13 – 02.12.2008 5