SEMiX101GD12E4s
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF
SEMiX101GD12E4s
Conditions
Values
1200
Unit
V A A A A V µs °C A A A A A °C A °C V
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
160 123 100 300 -20 ... 20
SEMiX®13
Trench IGBT Modules
Tj = 150 °C
10 -40 ... 175
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
121 91 100 300 550 -40 ... 175 600 -40 ... 125
IFnom
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532
IFRM IFSM Tj Module It(RMS) Tstg Visol
IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C
Typical Applications
• AC inverter drives • UPS • Electronic Welding
AC sinus 50Hz, t = 1 min
4000
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 100 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 6.2 0.41 0.34 565 7.50 Tj = 150 °C Tj = 150 °C Tj = 150 °C 187 35 10.8 467 94 13.3 0.27 1.8 2.2 0.8 0.7 10.0 15.0 5.8 0.1 2.05 2.4 0.9 0.8 11.5 16.0 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W
Conditions
min.
typ.
max.
Unit
Remarks
• Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C
VGE=VCE, IC = 3.8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 100 A
RG on = 1 Ω Tj = 150 °C RG off = 1 Ω di/dton = 3100 A/µs Tj = 150 °C di/dtoff = 1200 A/µs Tj = 150 °C per IGBT
GD © by SEMIKRON Rev. 1 – 20.02.2009 1
SEMiX101GD12E4s
Characteristics Symbol Conditions
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 100 A Tj = 150 °C di/dtoff = 3000 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 1.1 0.7 8.0 10.5
min.
typ.
2.2 2.1 1.3 0.9 9.0 12.5 95 16 6.5
max.
2.52 2.5 1.5 1.1 10.2 13.7
Unit
V V V V mΩ mΩ A µC mJ
Inverse diode VF = VEC IF = 100 A VGE = 0 V chip VF0
SEMiX®13
Trench IGBT Modules
SEMiX101GD12E4s
IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE'
0.48 20
K/W nH mΩ mΩ K/W
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Rth(c-s) Ms Mt w
res., terminal-chip per module to heat sink (M5)
TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5
0.7 1 0.04 5 5 350
Nm Nm Nm g Ω K
Typical Applications
• AC inverter drives • UPS • Electronic Welding
Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2%
Remarks
• Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C
GD 2 Rev. 1 – 20.02.2009 © by SEMIKRON
SEMiX101GD12E4s
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1 – 20.02.2009
3
SEMiX101GD12E4s
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1 – 20.02.2009
© by SEMIKRON
SEMiX101GD12E4s
SEMiX 13
GD
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 1 – 20.02.2009
5
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