SEMIX101GD12VS

SEMiX101GD12Vs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 159 121 100 300 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 121 91 100 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 300 550 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 13 VGES tpsc Tj IF IFnom Inverse diode SEMiX101GD12Vs Features • Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* • AC inverter drives • UPS • Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C Conditions IC = 100 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE=VCE, IC = 4 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 100 A VGE = ±15 V RG on = 1.5  RG off = 1.5  di/dton = 3000 A/µs di/dtoff = 1100 A/µs du/dtoff = 6700 V/ µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz Tj = 25 °C Tj = 150 °C min. typ. 1.75 2.2 0.94 0.88 8.1 13.2 max. 2.2 2.5 1.04 0.98 11.6 15.2 6.5 0.3 Unit V V V V m m V mA mA nF nF nF nC  ns ns mJ ns ns mJ 5.5 6 0.1 6.0 0.59 0.59 1100 7.50 319 46 12.9 482 68 11.4 0.27 K/W GD © by SEMIKRON Rev. 2 – 16.02.2011 1 SEMiX101GD12Vs Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 100 A Tj = 150 °C di/dtoff = 2900 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 1.1 0.7 8.0 10.5 min. typ. 2.2 2.1 1.3 0.9 9.0 12.5 115 18.3 7.7 max. 2.52 2.5 1.5 1.1 10.2 13.7 Unit V V V V m m A µC mJ Inverse diode VF = VEC IF = 100 A VGE = 0 V chip VF0 SEMiX® 13 IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.48 20 K/W nH m m K/W SEMiX101GD12Vs Features • Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 res., terminal-chip per module to heat sink (M5) TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.04 5 5 350 Rth(c-s) Ms Mt w Nm Nm Nm g  K Typical Applications* • AC inverter drives • UPS • Electronic Welding Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C GD 2 Rev. 2 – 16.02.2011 © by SEMIKRON SEMiX101GD12Vs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 16.02.2011 3 SEMiX101GD12Vs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 – 16.02.2011 © by SEMIKRON SEMiX101GD12Vs SEMiX 13 spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 2 – 16.02.2011 5