SEMIX141KT16S

SEMiX141KT16s Absolute Maximum Ratings Symbol Chip IT(AV) ITSM i2t sinus 180° 10 ms 10 ms Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C 130 98 3600 3000 57800 45000 1700 1600 1600 Tj = 130 °C Tj = 130 °C 200 1000 -40 ... 130 -40 ... 125 AC sinus 50Hz 1 min 1s 4000 4800 A A A A A2s A2s V V V A/µs V/µs °C °C V V Conditions Values Unit SEMiX 1s ® VRSM VRRM VDRM (di/dt)cr Rectifier Thyr./Diode Module SEMiX141KT16s (dv/dt)cr Tj Module Tstg Visol Features • Terminal height 17 mm • Chips soldered directly to isolated substrate Characteristics Symbol VT VT(TO) rT IDD;IRD tgd tgr tq IH IL VGT IGT VGD IGD Rth(j-c) Rth(j-c) Rth(j-c) Module Rth(c-s) per module Ms Mt a w 145 to heat sink (M5) to terminals (M6) 3 2.5 0.075 5 5 5 * 9,81 K/W K/W Nm Nm m/s2 g Typical Applications • Input Bridge Rectifier for • AC/DC motor control • power supply Conditions Tj = 25 °C, IT = 360 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VDD = VDRM; VRD = VRRM Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs VD = 0.67 * VDRM Tj = 130 °C Tj = 25 °C Tj = 25 °C, RG = 33 Ω Tj = 25 °C, d.c. Tj = 25 °C, d.c. Tj = 130 °C, d.c. Tj = 130 °C, d.c. per thyristor per diode sin. 180° per thyristor per diode per thyristor per diode min. typ. max. 1.6 0.85 2.5 60 Unit V V mΩ mA µs µs µs 1 2 150 100 200 2 150 0.25 10 0.2 0.21 300 500 mA mA V mA V mA K/W K/W K/W K/W K/W K/W KT © by SEMIKRON Rev. 0 – 15.09.2008 1 SEMiX141KT16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig. 2L: Power dissipation of one module vs. rms current Fig. 2R: Power dissipation of one module vs. case temperature Fig. 3L: Power dissipation of two modules vs. direct current Fig. 3R: Power dissipation of two modules vs. case temperature 2 Rev. 0 – 15.09.2008 © by SEMIKRON SEMiX141KT16s Fig. 4L: Power dissipation of three modules vs. direct current Fig. 4R: Power dissipation of three modules vs. case temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time © by SEMIKRON Rev. 0 – 15.09.2008 3 SEMiX141KT16s Fig. 9: Gate trigger characteristics KT SEMiX 1s 4 Rev. 0 – 15.09.2008 © by SEMIKRON