SEMIX151GAL12E4S

SEMiX151GAL12E4s Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF SEMiX151GAL12E4s Conditions Values 1200 Unit V A A A A V µs °C A A A A A °C A A A A A °C A °C V Tj = 175 °C Tc = 25 °C Tc = 80 °C 232 179 150 450 -20 ... 20 SEMiX®1s Trench IGBT Modules Tj = 150 °C 10 -40 ... 175 Tj = 175 °C Tc = 25 °C Tc = 80 °C 189 141 150 450 900 -40 ... 175 IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFSM Tj IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 189 141 150 450 900 -40 ... 175 Typical Applications • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 9.3 0.58 0.51 850 5.00 Tj = 25 °C Tj = 150 °C 5 1.8 2.2 0.8 0.7 6.7 10.0 5.8 0.1 2.05 2.4 0.9 0.8 7.7 10.7 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω Conditions min. typ. max. Unit GAL © by SEMIKRON Rev. 1 – 20.02.2009 1 SEMiX151GAL12E4s Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) Conditions VCC = 600 V IC = 150 A Tj = 150 °C Tj = 150 °C Tj = 150 °C min. typ. 204 42 16.6 468 91 18.4 max. Unit ns ns mJ ns ns mJ RG on = 1 Ω Tj = 150 °C RG off = 1 Ω di/dton = 3900 A/µs Tj = 150 °C di/dtoff = 2000 A/µs Tj = 150 °C per IGBT Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 3400 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 3400 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 1.1 0.7 4.3 6.7 1.1 0.7 4.3 6.7 0.19 2.1 2.1 1.3 0.9 5.6 7.8 115 23 8.9 0.31 2.1 2.1 1.3 0.9 5.6 7.8 115 23 8.9 0.31 16 2.5 2.4 1.5 1.1 6.4 8.5 2.46 2.4 1.5 1.1 6.4 8.5 K/W V V V V mΩ mΩ A µC mJ K/W V V V V mΩ mΩ A µC mJ K/W nH mΩ mΩ K/W SEMiX 1s Trench IGBT Modules SEMiX151GAL12E4s ® Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic Welding Freewheeling diode VF = VEC IF = 150 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Temperatur Sensor R100 B100/125 res., terminal-chip per module to heat sink (M5) Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.075 5 5 145 Nm Nm Nm g Ω K Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% GAL 2 Rev. 1 – 20.02.2009 © by SEMIKRON SEMiX151GAL12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 20.02.2009 3 SEMiX151GAL12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 20.02.2009 © by SEMIKRON SEMiX151GAL12E4s SEMiX 1s GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 1 – 20.02.2009 5