SEMIX151GB12VS

SEMiX151GB12Vs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 231 176 150 450 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 189 141 150 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 900 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 1s VGES tpsc Tj IF IFnom Inverse diode SEMiX151GB12Vs Features • Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* • AC inverter drives • UPS • Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C Conditions IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 150 A VGE = ±15 V RG on = 1  RG off = 1  di/dton = 4600 A/µs di/dtoff = 1700 A/µs du/dtoff = 6700 V/ µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz Tj = 25 °C Tj = 150 °C min. typ. 1.75 2.20 0.94 0.88 5.4 8.8 max. 2.20 2.5 1.04 0.98 7.7 10.1 6.5 0.3 Unit V V V V m m V mA mA nF nF nF nC  ns ns mJ ns ns mJ 5.5 6 0.1 9.0 0.89 0.88 1650 5.00 319 46 19.4 482 68 17.1 0.19 K/W GB © by SEMIKRON Rev. 2 – 16.02.2011 1 SEMiX151GB12Vs Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 4400 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 1.1 0.7 4.3 7.0 min. typ. 2.14 2.07 1.3 0.9 5.6 7.8 175 27.5 11.5 max. 2.46 2.38 1.5 1.1 6.4 8.5 Unit V V V V m m A µC mJ Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 SEMiX® 1s IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.31 16 K/W nH m m K/W SEMiX151GB12Vs Features • Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 res., terminal-chip per module to heat sink (M5) TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.075 5 5 145 Rth(c-s) Ms Mt w Nm Nm Nm g  K Typical Applications* • AC inverter drives • UPS • Electronic Welding Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C GB 2 Rev. 2 – 16.02.2011 © by SEMIKRON SEMiX151GB12Vs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 16.02.2011 3 SEMiX151GB12Vs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 – 16.02.2011 © by SEMIKRON SEMiX151GB12Vs SEMiX 1s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 2 – 16.02.2011 5