SEMIX171KH16S_10

SEMiX171KH16s Absolute Maximum Ratings Symbol Chip IT(AV) ITSM i2t sinus 180° 10 ms 10 ms Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C 170 125 5400 4800 145000 115000 1700 1600 1600 Tj = 130 °C Tj = 130 °C 200 1000 -40 ... 130 -40 ... 125 AC sinus 50Hz 1 min 1s 4000 4800 A A A A A2s A2s V V V A/µs V/µs °C °C V V Conditions Values Unit SEMiX 1s ® VRSM VRRM VDRM (di/dt)cr Rectifier Thyr./Diode Module SEMiX171KH16s (dv/dt)cr Tj Module Tstg Features • Terminal height 17 mm • Chips soldered directly to isolated substrate Visol Characteristics Symbol Chip VT VT(TO) rT IDD;IRD tgd tgr tq IH IL VGT IGT VGD IGD Rth(j-c) Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 145 per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.075 5 5 5 * 9,81 K/W K/W Nm Nm m/s2 g Tj = 25 °C, IT = 500 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VDD = VDRM; VRD = VRRM Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs VD = 0.67 * VDRM Tj = 130 °C Tj = 25 °C Tj = 25 °C, RG = 33 Ω Tj = 25 °C, d.c. Tj = 25 °C, d.c. Tj = 130 °C, d.c. Tj = 130 °C, d.c. per thyristor per module sin. 180° per thyristor per module per thyristor per module 0.18 0.18 2 150 0.25 10 1 2 150 150 300 400 1000 1.6 0.85 1.5 60 V V mΩ mA µs µs µs mA mA V mA V mA K/W K/W K/W K/W K/W K/W Typical Applications* • Input Bridge Rectifier for AC/DC motor control • Power supply Conditions min. typ. max. Unit KH © by SEMIKRON Rev. 2 – 25.03.2010 1 SEMiX171KH16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig. 2L: Power dissipation of one module vs. rms current Fig. 2R: Power dissipation of one module vs. case temperature Fig. 3L: Power dissipation of two modules vs. direct current Fig. 3R: Power dissipation of two modules vs. case temperature 2 Rev. 2 – 25.03.2010 © by SEMIKRON SEMiX171KH16s Fig. 4L: Power dissipation of three modules vs. direct current Fig. 4R: Power dissipation of three modules vs. case temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time © by SEMIKRON Rev. 2 – 25.03.2010 3 SEMiX171KH16s Fig. 9: Gate trigger characteristics spring configuration SEMiX 1s This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 4 Rev. 2 – 25.03.2010 © by SEMIKRON