0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SEMIX201GD128DS_07

SEMIX201GD128DS_07

  • 厂商:

    SEMIKRON( 赛米控)

  • 封装:

  • 描述:

    SEMIX201GD128DS_07 - SPT IGBT Modules - Semikron International

  • 数据手册
  • 价格&库存
SEMIX201GD128DS_07 数据手册
SEMiX 201GD128Ds Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX® 13s SPT IGBT Modules SEMiX 201GD128Ds Module Preliminary Data Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GD 1 20-04-2007 SCH © by SEMIKRON SEMiX 201GD128Ds Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMiX® 13s SPT IGBT Modules Module SEMiX 201GD128Ds Preliminary Data Features Temperature sensor Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GD 2 20-04-2007 SCH © by SEMIKRON SEMiX 201GD128Ds Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 20-04-2007 SCH © by SEMIKRON SEMiX 201GD128Ds Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 20-04-2007 SCH © by SEMIKRON SEMiX 201GD128Ds 5 20-04-2007 SCH © by SEMIKRON
SEMIX201GD128DS_07 价格&库存

很抱歉,暂时无法提供与“SEMIX201GD128DS_07”相匹配的价格&库存,您可以联系我们找货

免费人工找货