0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SEMIX202GB066HD

SEMIX202GB066HD

  • 厂商:

    SEMIKRON

  • 封装:

  • 描述:

    SEMIX202GB066HD - Trench IGBT Modules - Semikron International

  • 数据手册
  • 价格&库存
SEMIX202GB066HD 数据手册
SEMiX 202GB066HD Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX® 2 Trench IGBT Modules SEMiX 202GB066HD Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Target Data Features Typical Applications Remarks Inverse Diode Thermal characteristics Temperature sensor Mechanical data GB 1 10-04-2006 GES © by SEMIKRON SEMiX 202GB066HD Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 10-04-2006 GES © by SEMIKRON SEMiX 202GB066HD Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 10-04-2006 GES © by SEMIKRON SEMiX 202GB066HD Fig. 13 Typ. CAL diode recovered charge This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 10-04-2006 GES © by SEMIKRON
SEMIX202GB066HD 价格&库存

很抱歉,暂时无法提供与“SEMIX202GB066HD”相匹配的价格&库存,您可以联系我们找货

免费人工找货