SEMIX223GD12E4C_10

SEMiX223GD12E4c Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 150 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 333 256 225 675 -20 ... 20 10 -40 ... 175 270 202 225 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 675 1161 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 33c Trench IGBT Modules SEMiX223GD12E4c Tj = 175 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* • AC inverter drives • UPS • Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 225 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE=VCE, IC = 9 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 225 A Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 13.2 0.87 0.71 1275 3.33 213 60 22 535 113 31.4 0.135 Tj = 25 °C Tj = 150 °C 5 1.85 2.25 0.8 0.7 4.7 6.9 5.8 0.1 2.1 2.45 0.9 0.8 5.3 7.3 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C RG on = 1.5 Ω Tj = 150 °C RG off = 1.5 Ω di/dton = 3630 A/µs Tj = 150 °C di/dtoff = 2235 A/µs Tj = 150 °C per IGBT GD © by SEMIKRON Rev. 1 – 28.06.2010 1 SEMiX223GD12E4c Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 225 A Tj = 150 °C di/dtoff = 3900 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 1.1 0.7 3.6 4.7 min. typ. 2.2 2.1 1.3 0.9 3.9 5.4 210 37 17.2 max. 2.49 2.4 1.5 1.1 4.4 5.9 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 225 A VGE = 0 V chip VF0 SEMiX® 33c Trench IGBT Modules SEMiX223GD12E4c IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.22 20 K/W nH mΩ mΩ K/W res., terminal-chip per module to heat sink (M5) TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.014 5 5 900 Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Rth(c-s) Ms Mt w Nm Nm Nm g Ω K Typical Applications* • AC inverter drives • UPS • Electronic Welding Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C GD 2 Rev. 1 – 28.06.2010 © by SEMIKRON SEMiX223GD12E4c Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 28.06.2010 3 SEMiX223GD12E4c Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 28.06.2010 © by SEMIKRON SEMiX223GD12E4c SEMiX 33c pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 1 – 28.06.2010 5