SEMIX251D12FS_10

SEMiX251D12Fs Absolute Maximum Ratings Symbol IF IFSM i2t Conditions Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Values 250 215 1660 1330 13700 8800 1200 1200 -40 ... 150 -40 ... 125 Unit A A A A A2s A2s V V °C °C V V Rect. Diode Tj = 150 °C 10 ms SEMiX 13 ® VRSM VRRM Tj Module Bridge Rectifier Module (uncontrolled) SEMiX251D12Fs Tstg Visol AC sinus 50Hz 1 min 1s 4000 4800 Characteristics Features • Terminal height 17 mm • Chips soldered directly to isolated substrate Symbol VF V(TO) rT IRD Rth(j-c) Module Rth(c-s) Ms Mt a w Conditions Tj = 25 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C, VRD = VRRM;VRD = VRRM per diode min. typ. max. 2.5 1.2 7 40 0.26 Unit V V mΩ mA K/W K/W Rectifier Diode Typical Applications* • Fast Input Bridge Rectifier for AC/DC motor control • Power supply • High frequency applications per chip per module to heat sink (M5) to terminals (M6) 3 2.5 350 0.04 5 5 5 * 9,81 K/W K/W Nm Nm m/s2 g D © by SEMIKRON Rev. 9 – 25.03.2010 1 SEMiX251D12Fs Fig. 4L: Power dissipation per module vs. direct current Fig. 4R: Power dissipation per module vs. case temperature Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time 2 Rev. 9 – 25.03.2010 © by SEMIKRON SEMiX251D12Fs spring configuration SEMiX 13 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 9 – 25.03.2010 3