SEMIX253GB176HD

SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX® 3 Trench IGBT Modules SEMiX 253GB176HD Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Preliminary Data Features Typical Applications Inverse diode Remarks Thermal characteristics Temperature sensor Mechanical data GB 1 01-03-2006 GES © by SEMIKRON SEMiX 253GB176HD Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 01-03-2006 GES © by SEMIKRON SEMiX 253GB176HD Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 CAL diode forward charact., incl. RCC´+EE´ Fig. 12 Typ. CAL diode peak reverse recovery current 3 01-03-2006 GES © by SEMIKRON SEMiX 253GB176HD Fig. 13 Typ. CAL diode recovered charge This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 01-03-2006 GES © by SEMIKRON