SEMIX302GB12E4S

SEMiX302GB12E4s Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF SEMiX302GB12E4s Conditions Values 1200 Unit V A A A A V µs °C A A A A A °C A °C V Tj = 175 °C Tc = 25 °C Tc = 80 °C 463 356 300 900 -20 ... 20 SEMiX®2s Trench IGBT Modules Tj = 150 °C 10 -40 ... 175 Tj = 175 °C Tc = 25 °C Tc = 80 °C 356 266 300 900 1620 -40 ... 175 600 -40 ... 125 IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Typical Applications • AC inverter drives • UPS • Electronic Welding AC sinus 50Hz, t = 1 min 4000 Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 18.6 1.16 1.02 1700 2.50 Tj = 150 °C Tj = 150 °C Tj = 150 °C 282 60 30 564 117 44 0.096 1.8 2.2 0.8 0.7 3.3 5.0 5.8 0.1 2.05 2.4 0.9 0.8 3.8 5.3 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 0,5 Ω RGoff,main = 0,5 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 300 A RG on = 1.9 Ω Tj = 150 °C RG off = 1.9 Ω di/dton = 5000 A/µs Tj = 150 °C di/dtoff = 2800 A/µs Tj = 150 °C per IGBT GB © by SEMIKRON Rev. 1 – 20.02.2009 1 SEMiX302GB12E4s Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 300 A Tj = 150 °C di/dtoff = 4300 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 1.1 0.7 2.2 3.3 min. typ. 2.1 2.1 1.3 0.9 2.8 3.9 230 50 19 max. 2.46 2.4 1.5 1.1 3.2 4.3 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 SEMiX®2s Trench IGBT Modules SEMiX302GB12E4s IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.17 18 K/W nH mΩ mΩ K/W Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Rth(c-s) Ms Mt w res., terminal-chip per module to heat sink (M5) TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.045 5 5 250 Nm Nm Nm g Ω K Typical Applications • AC inverter drives • UPS • Electronic Welding Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 0,5 Ω RGoff,main = 0,5 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω GB 2 Rev. 1 – 20.02.2009 © by SEMIKRON SEMiX302GB12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 20.02.2009 3 SEMiX302GB12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 20.02.2009 © by SEMIKRON SEMiX302GB12E4s SEMiX 2s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 1 – 20.02.2009 5