SEMIX302GB176HD

SEMiX 302GB176HD Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX® 2 Trench IGBT Modules SEMiX 302GB176HD Module Preliminary Data Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB 1 18-04-2007 SCH © by SEMIKRON SEMiX 302GB176HD Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMiX® 2 Trench IGBT Modules Module SEMiX 302GB176HD Preliminary Data Features Temperature sensor Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Remarks This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB 2 18-04-2007 SCH © by SEMIKRON SEMiX 302GB176HD Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 18-04-2007 SCH © by SEMIKRON SEMiX 302GB176HD Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 18-04-2007 SCH © by SEMIKRON SEMiX 302GB176HD 5 18-04-2007 SCH © by SEMIKRON