SEMiX 302KH ... THYRISTOR BRIDGE,SCR,BRIDGE
Symbol
Conditions
Values
Units
SEMiX® 2s Rectifier (Thryr./Diode) Module
SEMiX 302KT SEMiX 302KH Preliminary Data
Features
Typical Applications
KH
KT
1
21-06-2007 SCH
© by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 1L Power dissipation per thyristor/diode vs. on-state current
Fig. 1R Power dissipation per thyristor/diode vs. ambient temperature
Fig. 2L Power dissipation of one module vs. rms current
Fig. 2R Power dissipation of one module vs. case temperature
Fig. 3L Power dissipation of two modules vs. direct current
Fig. 3R Power dissipation of two modules vs. case temperature
2
21-06-2007 SCH
© by SEMIKRON
SEMiX 302KH ... THYRISTOR BRIDGE,SCR,BRIDGE
Fig. 4L Power dissipation of three modules vs. direct current
Fig. 4R Power dissipation of three modules vs. case temperature
Fig. 5 Recovered charge vs. current decrease
Fig. 6 Transient thermal impedance vs. time
Fig. 7 On-state characteristics
Fig. 8 Surge overload current vs. time
3
21-06-2007 SCH
© by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 9 Gate trigger characteristics
Dimensions in mm
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
4
21-06-2007 SCH
© by SEMIKRON
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