SEMIX303GB12T4S

SEMiX 303GB12T4s Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX®3s Trench IGBT Modules SEMiX 303GB12T4s Inverse Diode Module Target Data Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB 1 16-07-2007 SCH © by SEMIKRON SEMiX 303GB12T4s Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMiX®3s Trench IGBT Modules Module SEMiX 303GB12T4s Target Data Features Temperature sensor Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Remarks This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB 2 16-07-2007 SCH © by SEMIKRON SEMiX 303GB12T4s Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 16-07-2007 SCH © by SEMIKRON SEMiX 303GB12T4s Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' 4 16-07-2007 SCH © by SEMIKRON SEMiX 303GB12T4s 5 16-07-2007 SCH © by SEMIKRON