SEMIX303GD12E4C

SEMiX303GD12E4c Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 150 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 466 359 300 900 -20 ... 20 10 -40 ... 175 338 252 300 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 1485 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 33c Trench IGBT Modules SEMiX303GD12E4c Tj = 175 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* • AC inverter drives • UPS • Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 100 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 18.5 1.22 1.03 1695 2.50 Tj = 150 °C Tj = 150 °C Tj = 150 °C 213 60 29.4 535 113 41.8 0.095 1.8 2.2 0.8 0.7 3.3 5.0 5.8 0.1 2.05 2.4 0.9 0.8 3.8 5.3 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C VGE=VCE, IC = 11.4 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 300 A RG on = 1.8 Ω Tj = 150 °C RG off = 1.8 Ω di/dton = 4840 A/µs Tj = 150 °C di/dtoff = 2980 A/µs Tj = 150 °C per IGBT GD © by SEMIKRON Rev. 4 – 16.12.2009 1 SEMiX303GD12E4c Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 300 A Tj = 150 °C di/dtoff = 5200 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 1.1 0.7 2.7 3.5 min. typ. 2.2 2.2 1.3 0.9 3.0 4.2 300 50 22.9 max. 2.52 2.5 1.5 1.1 3.4 4.6 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 SEMiX® 33c Trench IGBT Modules SEMiX303GD12E4c IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.18 20 K/W nH mΩ mΩ K/W res., terminal-chip per module to heat sink (M5) TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.014 5 5 900 Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Rth(c-s) Ms Mt w Nm Nm Nm g Ω K Typical Applications* • AC inverter drives • UPS • Electronic Welding Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C GD 2 Rev. 4 – 16.12.2009 © by SEMIKRON SEMiX303GD12E4c Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 4 – 16.12.2009 3 SEMiX303GD12E4c Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 4 – 16.12.2009 © by SEMIKRON SEMiX303GD12E4c SEMiX 33c pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 4 – 16.12.2009 5