SEMIX452GAL126HDS_10

SEMiX452GAL126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 455 319 300 600 -20 ... 20 10 -40 ... 150 394 272 300 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 1900 -40 ... 150 Tc = 25 °C Tc = 80 °C 373 258 300 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 1900 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMiX® 2s Trench IGBT Modules SEMiX452GAL126HDs Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 150 °C Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C 5 Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 21.5 1.13 0.98 2400 2.50 1.7 2 1 0.9 2.3 3.7 5.8 0.1 2.1 2.45 1.2 1.1 3.0 4.5 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω Conditions min. typ. max. Unit VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C GAL © by SEMIKRON Rev. 0 – 16.04.2010 1 SEMiX452GAL126HDs Characteristics Symbol td(on) tr Eon td(off) tf Eoff Conditions VCC = 600 V IC = 300 A RG on = 2 Ω RG off = 2 Ω Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C per IGBT Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 6200 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 6200 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode min. typ. 280 65 35 630 130 45 max. Unit ns ns mJ ns ns mJ SEMiX® 2s Trench IGBT Modules SEMiX452GAL126HDs Rth(j-c) 0.083 1.6 1.6 0.9 0.7 1.7 2.3 1 0.8 2.0 2.7 375 75 33 0.15 1.7 1.7 0.9 0.7 1.9 2.7 1 0.8 2.3 3.1 375 75 33 0.15 18 1.9 1.9 1.1 0.9 2.7 3.5 1.80 1.8 1.1 0.9 2.3 3.0 K/W V V V V mΩ mΩ A µC mJ K/W V V V V mΩ mΩ A µC mJ K/W nH mΩ mΩ K/W Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Freewheeling diode VF = VEC IF = 300 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Temperatur Sensor R100 B100/125 res., terminal-chip per module to heat sink (M5) Remarks • Case temperatur limited to TC=125°C max. • Not for new design TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.045 5 5 250 Nm Nm Nm g Ω K Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% GAL 2 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX452GAL126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 16.04.2010 3 SEMiX452GAL126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX452GAL126HDs SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 0 – 16.04.2010 5