SEMIX452GAR126HDS_08

SEMiX452GAR126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 455 319 300 600 -20 ... 20 10 -40 ... 150 Tc = 25 °C Tc = 80 °C 394 272 300 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 1900 -40 ... 150 Tc = 25 °C Tc = 80 °C 394 272 300 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 1900 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMiX®2s Trench IGBT Modules SEMiX452GAR126HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 150 °C Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Tj = 150 °C Typical Applications • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C 5 Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 21.5 1.13 0.98 2400 2.50 1.7 2.00 1 0.9 2.3 3.7 5.8 0.1 2.1 2.45 1.2 1.1 3.0 4.5 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω Conditions min. typ. max. Unit VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C GAR © by SEMIKRON Rev. 13 – 02.12.2008 1 SEMiX452GAR126HDs Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT per IGBT Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C rF IRRM Qrr Err Rth(j-c) Rth(j-s) Tj = 25 °C Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 6200 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode per diode Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C rF IRRM Qrr Err Rth(j-c) Rth(j-s) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Temperature sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 0,493 ±5% 3550 ±2% kΩ K res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 °C TC = 125 °C 18 0.7 1 0.045 5 5 250 nH mΩ mΩ K/W Nm Nm Nm g Tj = 25 °C Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 6200 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode per diode 0.9 0.7 1.7 2.3 1.6 1.6 1 0.8 2.0 2.7 375 75 33 0.15 1.8 1.8 1.1 0.9 2.3 3.0 0.9 0.7 1.7 2.3 1.6 1.6 1 0.8 2.0 2.7 375 75 33 0.15 1.8 1.8 1.1 0.9 2.3 3.0 Conditions VCC = 600 V IC = 300 A Tj = 125 °C RG on = 2 Ω RG off = 2 Ω min. typ. 280 65 35 630 130 45 max. Unit ns ns mJ ns ns mJ 0.083 K/W K/W V V V V mΩ mΩ A µC mJ K/W K/W V V V V mΩ mΩ A µC mJ K/W K/W SEMiX 2s Trench IGBT Modules SEMiX452GAR126HDs ® Rth(j-s) Inverse diode VF = VEC IF = 300 A VGE = 0 V chiplevel VF0 Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic Welding Freewheeling diode VF = VEC IF = 300 A VGE = 0 V chiplevel VF0 Remarks • Case temperatur limited to TC=125°C max. • Not for new design GAR 2 Rev. 13 – 02.12.2008 © by SEMIKRON SEMiX452GAR126HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic © by SEMIKRON Rev. 13 – 02.12.2008 3 SEMiX452GAR126HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 13 – 02.12.2008 © by SEMIKRON SEMiX452GAR126HDs SEMiX 2s GAR This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 13 – 02.12.2008 5