SEMIX452GB176HDS_08

SEMiX452GB176HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1700 V VGES tpsc Tj = 150 °C Tc = 25 °C Tc = 80 °C 1700 437 310 300 600 -20 ... 20 10 -55 ... 150 Tc = 25 °C Tc = 80 °C 389 262 300 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 2000 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX®2s Trench IGBT Modules SEMiX452GB176HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Tj = 150 °C Typical Applications • AC inverter drives • UPS • Electronic welders Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C 5.2 Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 26.4 1.10 0.88 2800 2.50 340 75 180 900 105 110 0.073 2 2.45 1 0.9 3.3 5.2 5.8 0.1 2.45 2.9 1.2 1.1 4.2 6.0 6.4 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W K/W Conditions min. typ. max. Unit VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1700 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 1200 V IC = 300 A Tj = 125 °C RG on = 4 Ω RG off = 4 Ω GB © by SEMIKRON Rev. 11 – 02.12.2008 1 SEMiX452GB176HDs Characteristics Symbol Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 4500 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 1200 V per diode per diode 18 res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 °C TC = 125 °C 0.7 1 0.045 5 5 250 0,493 ±5% 3550 ±2% 0.9 0.7 2.0 2.7 min. typ. 1.7 1.7 1.1 0.9 2.0 2.7 360 85 46 max. 1.9 1.9 1.3 1.1 2.0 2.7 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 300 A VGE = 0 V chiplevel VF0 rF IRRM SEMiX®2s Trench IGBT Modules SEMiX452GB176HDs Qrr Err Rth(j-c) Rth(j-s) Module LCE RCC'+EE' Rth(c-s) Ms Mt w 0.15 K/W K/W nH mΩ mΩ K/W Nm Nm Nm g Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic welders Temperature sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; kΩ K GB 2 Rev. 11 – 02.12.2008 © by SEMIKRON SEMiX452GB176HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic © by SEMIKRON Rev. 11 – 02.12.2008 3 SEMiX452GB176HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 11 – 02.12.2008 © by SEMIKRON SEMiX452GB176HDs SEMiX 2s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 11 – 02.12.2008 5