SEMiX453GB176HDs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1700 444 315 300 600 -20 ... 20 10 -55 ... 150 545 365 300 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 2900 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX® 3s
Trench IGBT Modules
SEMiX453GB176HDs
Tj = 150 °C
IFnom
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532
IFRM IFSM Tj Module It(RMS) Tstg Visol
Typical Applications*
• AC inverter drives • UPS • Electronic welders
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C 5.2 Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 26.4 1.10 0.88 2799 2.50 Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C 335 70 215 990 150 125 0.071 2 2.45 1 0.9 3.3 5.2 5.8 0.1 2.45 2.9 1.2 1.1 4.2 6.0 6.4 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W
Conditions
min.
typ.
max.
Unit
VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1700 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 1200 V IC = 300 A RG on = 4.3 Ω RG off = 4.3 Ω
GB © by SEMIKRON Rev. 15 – 16.12.2009 1
SEMiX453GB176HDs
Characteristics Symbol Conditions
Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C rF Tj = 25 °C Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 4700 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 1200 V per diode 0.9 0.7 1.3 1.8
min.
typ.
1.5 1.4 1.1 0.9 1.3 1.8 350 115 65
max.
1.70 1.6 1.3 1.1 1.3 1.8
Unit
V V V V mΩ mΩ A µC mJ
Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0
SEMiX® 3s
Trench IGBT Modules
SEMiX453GB176HDs
IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE'
0.11 20
K/W nH mΩ mΩ K/W
res., terminal-chip per module to heat sink (M5)
TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5
0.7 1 0.04 5 5 300
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532
Rth(c-s) Ms Mt w
Nm Nm Nm g Ω K
Typical Applications*
• AC inverter drives • UPS • Electronic welders
Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2%
GB 2 Rev. 15 – 16.12.2009 © by SEMIKRON
SEMiX453GB176HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 15 – 16.12.2009
3
SEMiX453GB176HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 15 – 16.12.2009
© by SEMIKRON
SEMiX453GB176HDs
SEMiX 3s
spring configuration
© by SEMIKRON
Rev. 15 – 16.12.2009
5
SEMiX453GB176HDs
This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
6
Rev. 15 – 16.12.2009
© by SEMIKRON
很抱歉,暂时无法提供与“SEMIX453GB176HDS”相匹配的价格&库存,您可以联系我们找货
免费人工找货