SEMiX453GD12E4c
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 150 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 683 526 450 1350 -20 ... 20 10 -40 ... 175 544 407 450 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1350 2430 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX® 33c
Trench IGBT Modules
SEMiX453GD12E4c
Tj = 175 °C
IFnom
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532
IFRM IFSM Tj Module It(RMS) Tstg Visol
Typical Applications*
• AC inverter drives • UPS • Electronic Welding
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 27.9 1.74 1.53 2550 1.67 Tj = 150 °C Tj = 150 °C Tj = 150 °C 253 85 52 629 130 67.8 0.065 1.8 2.2 0.8 0.7 2.2 3.3 5.8 0.1 2.05 2.4 0.9 0.8 2.6 3.6 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W
Conditions
min.
typ.
max.
Unit
Remarks
• Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C
VGE=VCE, IC = 18 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 450 A
RG on = 2 Ω Tj = 150 °C RG off = 2 Ω di/dton = 4400 A/µs Tj = 150 °C di/dtoff = 3900 A/µs Tj = 150 °C per IGBT
GD © by SEMIKRON Rev. 4 – 16.12.2009 1
SEMiX453GD12E4c
Characteristics Symbol Conditions
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 450 A Tj = 150 °C di/dtoff = 5200 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 1.1 0.7 1.4 2.2
min.
typ.
2.1 2.1 1.3 0.9 1.9 2.6 350 67 28
max.
2.46 2.4 1.5 1.1 2.1 2.8
Unit
V V V V mΩ mΩ A µC mJ
Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0
SEMiX® 33c
Trench IGBT Modules
SEMiX453GD12E4c
IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE'
0.11 20
K/W nH mΩ mΩ K/W
res., terminal-chip per module to heat sink (M5)
TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5
0.7 1 0.014 5 5 900
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532
Rth(c-s) Ms Mt w
Nm Nm Nm g Ω K
Typical Applications*
• AC inverter drives • UPS • Electronic Welding
Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2%
Remarks
• Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C
GD 2 Rev. 4 – 16.12.2009 © by SEMIKRON
SEMiX453GD12E4c
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 4 – 16.12.2009
3
SEMiX453GD12E4c
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 4 – 16.12.2009
© by SEMIKRON
SEMiX453GD12E4c
SEMiX 33c
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 4 – 16.12.2009
5
很抱歉,暂时无法提供与“SEMIX453GD12E4C”相匹配的价格&库存,您可以联系我们找货
免费人工找货