SEMIX503GB126HDS_09

SEMiX503GB126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 466 327 300 600 -20 ... 20 10 -40 ... 150 431 298 300 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 2000 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 3s Trench IGBT Modules SEMiX503GB126HDs Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* • AC inverter drives • UPS • Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C 5 Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 21.6 1.13 0.98 2400 2.50 Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C 275 55 28 625 125 44 0.08 1.7 2 1 0.9 2.3 3.7 5.8 0.1 2.1 2.45 1.2 1.1 3.0 4.5 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks • Case temperatur limited to TC=125°C max. • Not for new design VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 300 A RG on = 2.2 Ω RG off = 2.2 Ω GB © by SEMIKRON Rev. 16 – 16.12.2009 1 SEMiX503GB126HDs Characteristics Symbol Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C rF Tj = 25 °C Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 6900 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode 0.9 0.7 1.7 2.3 min. typ. 1.6 1.6 1 0.8 2.0 2.7 400 77 32.5 max. 1.80 1.8 1.1 0.9 2.3 3.0 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 SEMiX® 3s Trench IGBT Modules SEMiX503GB126HDs IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.13 20 K/W nH mΩ mΩ K/W res., terminal-chip per module to heat sink (M5) TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.04 5 5 300 Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Rth(c-s) Ms Mt w Nm Nm Nm g Ω K Typical Applications* • AC inverter drives • UPS • Electronic Welding Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Remarks • Case temperatur limited to TC=125°C max. • Not for new design GB 2 Rev. 16 – 16.12.2009 © by SEMIKRON SEMiX503GB126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 16 – 16.12.2009 3 SEMiX503GB126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 16 – 16.12.2009 © by SEMIKRON SEMiX503GB126HDs SEMiX 3s spring configuration © by SEMIKRON Rev. 16 – 16.12.2009 5 SEMiX503GB126HDs This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 6 Rev. 16 – 16.12.2009 © by SEMIKRON