SEMIX503GB126HDS_11

SEMiX503GB126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 466 327 300 600 -20 ... 20 Tj = 125 °C 10 -40 ... 150 Tc = 25 °C Tc = 80 °C 431 298 300 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 2000 -40 ... 150 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 3s Trench IGBT Modules SEMiX503GB126HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 VGES tpsc Tj IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Inverse diode Tj = 150 °C Typical Applications* • AC inverter drives • UPS • Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT Conditions IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 300 A VGE = ±15 V RG on = 2.2  RG off = 2.2  Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C min. typ. 1.7 2.0 1 0.9 2.3 3.7 max. 2.1 2.45 1.2 1.1 3.0 4.5 6.5 0.3 Unit V V V V m m V mA mA nF nF nF nC  ns ns mJ ns ns mJ Remarks • Case temperatur limited to TC=125°C max. • Not for new design VGE=VCE, IC = 12 mA Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 5 5.8 0.1 21.6 1.13 0.98 2400 2.50 275 55 28 625 125 44 0.08 K/W GB © by SEMIKRON Rev. 1 – 23.03.2011 1 SEMiX503GB126HDs Characteristics Symbol Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C rF Tj = 25 °C Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 6900 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode 0.9 0.7 1.7 2.3 min. typ. 1.6 1.6 1 0.8 2.0 2.7 400 77 32.5 max. 1.80 1.8 1.1 0.9 2.3 3.0 Unit V V V V m m A µC mJ Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 SEMiX® 3s Trench IGBT Modules SEMiX503GB126HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w 0.13 20 K/W nH m m K/W res., terminal-chip per module to heat sink (M5) TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.04 5 5 300 Nm Nm Nm g  K Typical Applications* • AC inverter drives • UPS • Electronic Welding Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Remarks • Case temperatur limited to TC=125°C max. • Not for new design GB 2 Rev. 1 – 23.03.2011 © by SEMIKRON SEMiX503GB126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 23.03.2011 3 SEMiX503GB126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 23.03.2011 © by SEMIKRON SEMiX503GB126HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 23.03.2011 5