SEMIX503GD126HDC_09

SEMiX503GD126HDc Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 466 327 300 600 -20 ... 20 10 -40 ... 150 412 284 300 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 2000 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 33c Trench IGBT Modules SEMiX503GD126HDc Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* • AC inverter drives • UPS • Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C 5 Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 21.6 1.13 0.98 2400 2.50 Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C 275 55 28 625 125 44 0.08 1.7 2 1 0.9 2.3 3.7 5.8 0.1 2.1 2.45 1.2 1.1 3.0 4.5 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks • Case temperatur limited to TC=125°C max. • Not for new design VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 300 A RG on = 2.2 Ω RG off = 2.2 Ω GD © by SEMIKRON Rev. 17 – 16.12.2009 1 SEMiX503GD126HDc Characteristics Symbol Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C rF Tj = 25 °C Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 6900 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode 0.9 0.7 1.7 2.3 min. typ. 1.6 1.6 1 0.8 2.0 2.7 400 77 32.5 max. 1.80 1.8 1.1 0.9 2.3 3.0 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 SEMiX® 33c Trench IGBT Modules SEMiX503GD126HDc IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.14 20 K/W nH mΩ mΩ K/W res., terminal-chip per module to heat sink (M5) TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.014 5 5 900 Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Rth(c-s) Ms Mt w Nm Nm Nm g Ω K Typical Applications* • AC inverter drives • UPS • Electronic Welding Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Remarks • Case temperatur limited to TC=125°C max. • Not for new design GD 2 Rev. 17 – 16.12.2009 © by SEMIKRON SEMiX503GD126HDc Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 17 – 16.12.2009 3 SEMiX503GD126HDc Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 17 – 16.12.2009 © by SEMIKRON SEMiX503GD126HDc SEMiX 33c pinout * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 17 – 16.12.2009 5