SEMIX603GAR066HDS_10

SEMiX603GAR066HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 150 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 600 720 541 600 1200 -20 ... 20 6 -40 ... 175 771 562 600 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1200 1800 -40 ... 175 Tc = 25 °C Tc = 80 °C 795 577 600 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1200 1800 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMiX® 3s Trench IGBT Modules SEMiX603GAR066HDs Tj = 175 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 37.0 2.31 1.10 4800 0.67 1.45 1.7 0.9 0.85 0.9 1.4 5.8 0.15 1.85 2.1 1 0.9 1.4 2.0 6.5 0.45 V V V V mΩ mΩ V mA mA nF nF nF nC Ω Conditions min. typ. max. Unit VGE=VCE, IC = 9.6 mA VGE = 0 V VCE = 600 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C GAR © by SEMIKRON Rev. 0 – 16.04.2010 1 SEMiX603GAR066HDs Characteristics Symbol td(on) tr Eon td(off) tf Eoff Conditions VCC = 300 V IC = 600 A RG on = 3 Ω RG off = 3 Ω Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C per IGBT Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 3800 A/µs T = 150 °C j VGE = -8 V Tj = 150 °C VCC = 300 V per diode Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 3800 A/µs T = 150 °C j VGE = -8 V Tj = 150 °C VCC = 300 V per diode min. typ. 150 145 12 1050 105 43 max. Unit ns ns mJ ns ns mJ SEMiX® 3s Trench IGBT Modules SEMiX603GAR066HDs Rth(j-c) 0.087 1.4 1.4 0.9 0.75 0.5 0.8 1 0.85 0.7 0.9 350 63 13 0.11 1.3 1.3 0.9 0.75 0.4 0.7 1 0.85 0.6 0.8 350 63 13 0.11 20 1.5 1.5 1.1 0.95 0.7 0.9 1.60 1.6 1.1 0.95 0.8 1.1 K/W V V V V mΩ mΩ A µC mJ K/W V V V V mΩ mΩ A µC mJ K/W nH mΩ mΩ K/W Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Freewheeling diode VF = VEC IF = 600 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Temperatur Sensor R100 B100/125 res., terminal-chip per module to heat sink (M5) Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.04 5 5 300 Nm Nm Nm g Ω K Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% GAR 2 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX603GAR066HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 16.04.2010 3 SEMiX603GAR066HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX603GAR066HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 0 – 16.04.2010 5