SEMIX603GB066HDS_11

SEMiX603GB066HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 600 720 541 600 1200 -20 ... 20 Tj = 150 °C 6 -40 ... 175 Tc = 25 °C Tc = 80 °C 771 562 600 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1200 1800 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 3s Trench IGBT Modules SEMiX603GB066HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 VGES tpsc Tj IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Inverse diode Tj = 175 °C Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT Conditions IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE = 0 V VCE = 600 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 300 V IC = 600 A VGE = ±15 V RG on = 3  RG off = 3  Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C min. typ. 1.45 1.7 0.9 0.85 0.9 1.4 max. 1.85 2.1 1 0.9 1.4 2.0 6.5 0.45 Unit V V V V m m V mA mA nF nF nF nC  ns ns mJ ns ns mJ Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance VGE=VCE, IC = 9.6 mA Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 5 5.8 0.15 37.0 2.31 1.10 4800 0.67 150 145 12 1050 105 43 0.087 K/W GB © by SEMIKRON Rev. 1 – 23.03.2011 1 SEMiX603GB066HDs Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 3800 A/µs T = 150 °C j VGE = -8 V Tj = 150 °C VCC = 300 V per diode 0.9 0.75 0.5 0.8 min. typ. 1.4 1.4 1 0.85 0.7 0.9 350 63 13 max. 1.60 1.6 1.1 0.95 0.8 1.1 Unit V V V V m m A µC mJ Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0 SEMiX® 3s Trench IGBT Modules SEMiX603GB066HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w 0.11 20 K/W nH m m K/W res., terminal-chip per module to heat sink (M5) TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.04 5 5 300 Nm Nm Nm g  K Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance GB 2 Rev. 1 – 23.03.2011 © by SEMIKRON SEMiX603GB066HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 23.03.2011 3 SEMiX603GB066HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 23.03.2011 © by SEMIKRON SEMiX603GB066HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 23.03.2011 5