SEMIX604GAL12E4S

SEMiX604GAL12E4s Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 916 704 600 1800 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 707 529 600 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1800 3240 -40 ... 175 Tc = 25 °C Tc = 80 °C 707 529 600 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1800 3240 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMiX® 4s Trench IGBT Modules SEMiX604GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 VGES tpsc Tj IF IFnom IFRM IFSM Tj Inverse diode Tj = 175 °C Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0  RGoff,main = 6,2  RG,X = 2,2  RE,X = 0,5  Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint Conditions IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C Tj = 25 °C Tj = 150 °C min. typ. 1.8 2.2 0.8 0.7 1.7 2.5 max. 2.05 2.4 0.9 0.8 1.9 2.7 6.5 0.36 Unit V V V V m m V mA mA nF nF nF nC  VGE=VCE, IC = 24 mA Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 5 5.8 0.12 37.2 2.32 2.04 3400 1.25 GAL © by SEMIKRON Rev. 0 – 16.11.2010 1 SEMiX604GAL12E4s Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) VCC = 600 V IC = 600 A Conditions Tj = 150 °C Tj = 150 °C min. typ. 374 85 35 1277 114 110.4 max. Unit ns ns mJ ns ns mJ Tj = 150 °C RG on = 1.7  Tj = 150 °C RG off = 6.9  di/dton = 7100 A/µs Tj = 150 °C di/dtoff = 6350 A/µs Tj = 150 °C per IGBT Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 6000 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 6000 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 1.1 0.7 1.1 1.7 1.1 0.7 1.1 1.7 SEMiX® 4s Trench IGBT Modules SEMiX604GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 0.049 2.1 2.1 1.3 0.9 1.4 1.9 430 100 44 0.086 2.1 2.1 1.3 0.9 1.4 1.9 430 100 44 0.086 22 2.46 2.4 1.5 1.1 1.6 2.1 2.46 2.4 1.5 1.1 1.6 2.1 K/W V V V V m m A µC mJ K/W V V V V m m A µC mJ K/W nH m m K/W Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Typical Applications* • AC inverter drives • UPS • Electronic Welding Freewheeling diode VF = VEC IF = 600 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Temperatur Sensor R100 B100/125 res., terminal-chip per module to heat sink (M5) Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0  RGoff,main = 6,2  RG,X = 2,2  RE,X = 0,5  TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.03 5 5 400 Nm Nm Nm g  K Tc=100°C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% GAL 2 Rev. 0 – 16.11.2010 © by SEMIKRON SEMiX604GAL12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 16.11.2010 3 SEMiX604GAL12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 – 16.11.2010 © by SEMIKRON SEMiX604GAL12E4s SEMiX 4s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 0 – 16.11.2010 5