SEMIX604GB12E4S

SEMiX604GB12E4s Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF SEMiX604GB12E4s Conditions Values 1200 Unit V A A A A V µs °C A A A A A °C A °C V Tj = 175 °C Tc = 25 °C Tc = 80 °C 916 704 600 1800 -20 ... 20 SEMiX®4s Trench IGBT Modules Tj = 150 °C 10 -40 ... 175 Tj = 175 °C Tc = 25 °C Tc = 80 °C 707 529 600 1800 3240 -40 ... 175 600 -40 ... 125 IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Typical Applications • AC inverter drives • UPS • Electronic Welding AC sinus 50Hz, t = 1 min 4000 Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 37.2 2.32 2.04 3400 1.25 Tj = 150 °C Tj = 150 °C Tj = 150 °C 374 85 35 1277 114 110.4 0.049 1.8 2.2 0.8 0.7 1.7 2.5 5.8 0.12 2.05 2.4 0.9 0.8 1.9 2.7 6.5 0.36 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 Ω RGoff,main = 6,2 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω VGE=VCE, IC = 24 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 600 A RG on = 1.7 Ω Tj = 150 °C RG off = 6.9 Ω di/dton = 7100 A/µs Tj = 150 °C di/dtoff = 6350 A/µs Tj = 150 °C per IGBT GB © by SEMIKRON Rev. 1 – 20.02.2009 1 SEMiX604GB12E4s Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 6000 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 1.1 0.7 1.1 1.7 min. typ. 2.1 2.1 1.3 0.9 1.4 1.9 430 100 44 max. 2.46 2.4 1.5 1.1 1.6 2.1 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0 SEMiX®4s Trench IGBT Modules SEMiX604GB12E4s IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.086 22 K/W nH mΩ mΩ K/W Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Rth(c-s) Ms Mt w res., terminal-chip per module to heat sink (M5) TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.03 5 5 400 Nm Nm Nm g Ω K Typical Applications • AC inverter drives • UPS • Electronic Welding Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 Ω RGoff,main = 6,2 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω GB 2 Rev. 1 – 20.02.2009 © by SEMIKRON SEMiX604GB12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 20.02.2009 3 SEMiX604GB12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 20.02.2009 © by SEMIKRON SEMiX604GB12E4s SEMiX 4s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 1 – 20.02.2009 5