SEMIX653GAR176HDS

SEMiX 653GB176HDs Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX® 3s Trench IGBT Modules SEMiX 653GB176HDs SEMiX 653GAL176HDs SEMiX 653GAR176HDs Preliminary Data Module Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB GAL GAR 1 20-04-2007 SCH © by SEMIKRON SEMiX 653GB176HDs Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMiX® 3s Trench IGBT Modules Module SEMiX 653GB176HDs SEMiX 653GAL176HDs SEMiX 653GAR176HDs Preliminary Data Features Temperature sensor Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Remarks GB GAL GAR 2 20-04-2007 SCH © by SEMIKRON SEMiX 653GB176HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 20-04-2007 SCH © by SEMIKRON SEMiX 653GB176HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 20-04-2007 SCH © by SEMIKRON SEMiX 653GB176HDs 5 20-04-2007 SCH © by SEMIKRON