SEMIX653GB176HDS_10

SEMiX653GB176HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1700 619 438 450 900 -20 ... 20 10 -55 ... 150 545 365 450 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 2900 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 3s Trench IGBT Modules SEMiX653GB176HDs Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* • AC inverter drives • UPS • Electronic welders Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 450 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C 5.2 Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 39.6 1.65 1.31 4200 1.67 Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C 290 90 300 975 190 180 0.054 2 2.45 1 0.9 2.2 3.4 5.8 2.45 2.9 1.2 1.1 2.8 4.0 6.4 3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit VGE=VCE, IC = 18 mA VGE = 0 V VCE = 1700 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 1200 V IC = 450 A RG on = 3.6 Ω RG off = 3.6 Ω GB © by SEMIKRON Rev. 1 – 24.06.2010 1 SEMiX653GB176HDs Characteristics Symbol Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C rF Tj = 25 °C Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 4200 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 1200 V per diode 0.9 0.7 1.3 1.8 min. typ. 1.7 1.7 1.1 0.9 1.3 1.8 380 130 73 max. 1.90 1.9 1.3 1.1 1.3 1.8 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0 SEMiX® 3s Trench IGBT Modules SEMiX653GB176HDs IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.11 20 K/W nH mΩ mΩ K/W res., terminal-chip per module to heat sink (M5) TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.04 5 5 300 Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Rth(c-s) Ms Mt w Nm Nm Nm g Ω K Typical Applications* • AC inverter drives • UPS • Electronic welders Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% GB 2 Rev. 1 – 24.06.2010 © by SEMIKRON SEMiX653GB176HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 24.06.2010 3 SEMiX653GB176HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 24.06.2010 © by SEMIKRON SEMiX653GB176HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 1 – 24.06.2010 5