SEMIX703GAL126HDS_09

SEMiX703GAL126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 642 449 450 900 -20 ... 20 10 -40 ... 150 561 384 450 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 2900 -40 ... 150 Tc = 25 °C Tc = 80 °C 561 384 450 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 2900 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMiX® 3s Trench IGBT Modules SEMiX703GAL126HDs Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 150 °C Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 450 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C 5 Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 32.3 1.69 1.46 3600 1.67 1.7 2 1 0.9 1.6 2.4 5.8 0.1 2.1 2.45 1.2 1.1 2.0 3.0 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω Conditions min. typ. max. Unit VGE=VCE, IC = 18 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C GAL © by SEMIKRON Rev. 16 – 16.12.2009 1 SEMiX703GAL126HDs Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 8500 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% Ω K res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 °C TC = 125 °C 20 0.7 1 0.04 5 5 300 nH mΩ mΩ K/W Nm Nm Nm g Tj = 25 °C Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 8500 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode 0.9 0.7 1.1 1.6 0.9 0.7 1.1 1.6 1.6 1.6 1 0.8 1.3 1.8 580 130 60 0.11 1.6 1.6 1 0.8 1.3 1.8 580 130 60 0.11 1.8 1.8 1.1 0.9 1.6 2.0 Conditions VCC = 600 V IC = 450 A RG on = 1.6 Ω RG off = 1.6 Ω Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C min. typ. 310 60 32 680 135 68 max. Unit ns ns mJ ns ns mJ 0.061 1.80 1.8 1.1 0.9 1.6 2.0 K/W V V V V mΩ mΩ A µC mJ K/W V V V V mΩ mΩ A µC mJ K/W SEMiX 3s Trench IGBT Modules SEMiX703GAL126HDs ® Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Freewheeling diode VF = VEC IF = 450 A VGE = 0 V chip VF0 Remarks • Case temperatur limited to TC=125°C max. • Not for new design GAL 2 Rev. 16 – 16.12.2009 © by SEMIKRON SEMiX703GAL126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 16 – 16.12.2009 3 SEMiX703GAL126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 16 – 16.12.2009 © by SEMIKRON SEMiX703GAL126HDs SEMiX 3s spring configuration © by SEMIKRON Rev. 16 – 16.12.2009 5 SEMiX703GAL126HDs This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 6 Rev. 16 – 16.12.2009 © by SEMIKRON