SEMIX703GAL126HDS_10

SEMiX703GAL126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 642 449 450 900 -20 ... 20 10 -40 ... 150 561 384 450 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 2900 -40 ... 150 Tc = 25 °C Tc = 80 °C 533 367 450 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 2900 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMiX® 3s Trench IGBT Modules SEMiX703GAL126HDs Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 150 °C Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 450 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C 5 Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 32.3 1.69 1.46 3600 1.67 1.7 2 1 0.9 1.6 2.4 5.8 0.1 2.1 2.45 1.2 1.1 2.0 3.0 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω Conditions min. typ. max. Unit VGE=VCE, IC = 18 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C GAL © by SEMIKRON Rev. 0 – 16.04.2010 1 SEMiX703GAL126HDs Characteristics Symbol td(on) tr Eon td(off) tf Eoff Conditions VCC = 600 V IC = 450 A RG on = 1.6 Ω RG off = 1.6 Ω Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C per IGBT Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 8500 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 8500 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode min. typ. 310 60 32 680 135 68 max. Unit ns ns mJ ns ns mJ SEMiX® 3s Trench IGBT Modules SEMiX703GAL126HDs Rth(j-c) 0.061 1.6 1.6 0.9 0.7 1.1 1.6 1 0.8 1.3 1.8 580 130 60 0.11 1.7 1.7 0.9 0.7 1.3 1.8 1 0.8 1.5 2.1 580 130 60 0.11 20 1.9 1.9 1.1 0.9 1.8 2.3 1.80 1.8 1.1 0.9 1.6 2.0 K/W V V V V mΩ mΩ A µC mJ K/W V V V V mΩ mΩ A µC mJ K/W nH mΩ mΩ K/W Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Freewheeling diode VF = VEC IF = 450 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Temperatur Sensor R100 B100/125 res., terminal-chip per module to heat sink (M5) Remarks • Case temperatur limited to TC=125°C max. • Not for new design TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5 0.7 1 0.04 5 5 300 Nm Nm Nm g Ω K Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% GAL 2 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX703GAL126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 16.04.2010 3 SEMiX703GAL126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX703GAL126HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 0 – 16.04.2010 5