SEMiX854GB176HDs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1700 779 549 600 1200 -20 ... 20 10 -55 ... 150 740 496 600 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1200 3800 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX® 4s
Trench IGBT Modules
SEMiX854GB176HDs
Tj = 150 °C
IFnom
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532
IFRM IFSM Tj Module It(RMS) Tstg Visol
Typical Applications*
• AC inverter drives • UPS • Electronic welders
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C 5.2 Tj = 25 °C Tj = 125 °C f = 1 MHz f = 1 MHz f = 1 MHz 52.8 2.20 1.75 5600 1.25 Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C 340 80 395 890 155 235 0.045 2 2.45 1 0.9 1.7 2.6 5.8 2.45 2.9 1.2 1.1 2.1 3.0 6.4 4 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W
Conditions
min.
typ.
max.
Unit
VGE=VCE, IC = 24 mA VGE = 0 V VCE = 1700 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 1200 V IC = 600 A RG on = 2 Ω RG off = 2 Ω
GB © by SEMIKRON Rev. 1 – 24.06.2010 1
SEMiX854GB176HDs
Characteristics Symbol Conditions
Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C rF Tj = 25 °C Tj = 125 °C IF = 600 A Tj = 125 °C di/dtoff = 8000 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 1200 V per diode 0.9 0.7 1.0 1.3
min.
typ.
1.7 1.7 1.1 0.9 1.0 1.3 730 220 170
max.
1.90 1.9 1.3 1.1 1.0 1.3
Unit
V V V V mΩ mΩ A µC mJ
Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0
SEMiX® 4s
Trench IGBT Modules
SEMiX854GB176HDs
IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE'
0.081 22
K/W nH mΩ mΩ K/W
res., terminal-chip per module to heat sink (M5)
TC = 25 °C TC = 125 °C 3 to terminals (M6) 2.5
0.7 1 0.03 5 5 400
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532
Rth(c-s) Ms Mt w
Nm Nm Nm g Ω K
Typical Applications*
• AC inverter drives • UPS • Electronic welders
Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2%
GB 2 Rev. 1 – 24.06.2010 © by SEMIKRON
SEMiX854GB176HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1 – 24.06.2010
3
SEMiX854GB176HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1 – 24.06.2010
© by SEMIKRON
SEMiX854GB176HDs
SEMiX 4s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 1 – 24.06.2010
5
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