SK100GD126T

SK100GD126T Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP® 4 IGBT Module SK100GD126T Inverse Diode Module Preliminary Data Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications* GD-T 1 15-07-2008 DIL © by SEMIKRON SK100GD126T Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP® 4 IGBT Module SK100GD126T Temperature sensor Preliminary Data Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Typical Applications* GD-T 2 15-07-2008 DIL © by SEMIKRON SK100GD126T Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (Ts) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 15-07-2008 DIL © by SEMIKRON SK100GD126T Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 15-07-2008 DIL © by SEMIKRON SK100GD126T UL recognized file no. E 63 532 5 15-07-2008 DIL © by SEMIKRON