SK10GD126ET_07

SK10GD126ET Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP® 3 IGBT Module SK10GD126ET Inverse Diode Module Preliminary Data Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GD-ET 1 21-02-2007 SCT © by SEMIKRON SK10GD126ET Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP® 3 IGBT Module SK10GD126ET Temperature sensor Preliminary Data Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications GD-ET 2 21-02-2007 SCT © by SEMIKRON SK10GD126ET Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 21-02-2007 SCT © by SEMIKRON SK10GD126ET Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 21-02-2007 SCT © by SEMIKRON SK10GD126ET UL recognized file no. E 63 532 5 21-02-2007 SCT © by SEMIKRON