SK10GH123
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMITOP® 2
Inverse Diode
IGBT Module
SK10GH123
Module
Preliminary Data
Features
Characteristics Symbol Conditions IGBT min. typ. max. Units
Typical Applications
GH
1
30-10-2006 DIL
© by SEMIKRON
SK10GH123
Characteristics Symbol Conditions Inverse Diode min. typ. max. Units
SEMITOP® 2 IGBT Module
SK10GH123 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Preliminary Data This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
Features
Typical Applications
GH
2
30-10-2006 DIL
© by SEMIKRON
SK10GH123
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
30-10-2006 DIL
© by SEMIKRON
SK10GH123
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
30-10-2006 DIL
© by SEMIKRON
SK10GH123
UL recognized file no. E 63 532
5
30-10-2006 DIL
© by SEMIKRON
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