SK200GD066T_07

SK200GD066T Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP® 4 IGBT Module Inverse Diode Module SK200GD066T Target Data Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GD-T 1 14-09-2007 DIL © by SEMIKRON SK200GD066T Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP® 4 IGBT Module SK200GD066T Temperature sensor Target Data Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications GD-T 2 14-09-2007 DIL © by SEMIKRON SK200GD066T Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 14-09-2007 DIL © by SEMIKRON SK200GD066T Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 14-09-2007 DIL © by SEMIKRON SK200GD066T 5 14-09-2007 DIL © by SEMIKRON