SK30GAR128

SK 30 GB 128 Absolute Maximum Ratings Symbol Conditions IGBT Values Units Inverse/Freewheeling CAL diode SEMITOP® 2 IGBT Module SK 30 GB 128 SK 30 GAL 128 SK 30 GAR 128 Preliminary Data Characteristics Symbol Conditions IGBT min. typ. max. Units Features Inverse/Freewheeling CAL diode Typical Applications Mechanical data GAL GAR GB 1 23-02-2006 RAM © by SEMIKRON SK 30 GB 128 Fig.5 Typ. output characteristic, tp = 250 µs, 25 °C Fig.6 Typ. output characteristic, tp = 25 µs, 125 °C Fig.7 Turn-on / -off energy = f (IC) Fig.8 Turn-on / -off energy = f (RG) Fig.9 Typ. gate charge characteristic Fig.10 Typ. capacitances vs. VCE 2 23-02-2006 RAM © by SEMIKRON SK 30 GB 128 Fig.11 Typ. switching times vs. IC Fig.12 Typ. switching times vs. gate resistor RG Fig.13 Typ. Freewheeling diode forward characteristic 3 23-02-2006 RAM © by SEMIKRON SK 30 GB 128 UL Recognized File no. E 63532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 23-02-2006 RAM © by SEMIKRON