SK60GAR125

SK60GAL125 Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP® 2 Inverse Diode IGBT Module SK60GAL125 SK60GAR125 Target Data Freewheeling Diode Features Module Typical Applications Characteristics Symbol Conditions IGBT min. typ. max. Units GAL GAR 1 01-06-2007 DIL © by SEMIKRON SK60GAL125 Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP® 2 IGBT Module Freewheeling Diode SK60GAL125 SK60GAR125 Target Data Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Typical Applications This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GAL GAR 2 01-06-2007 DIL © by SEMIKRON SK60GAL125 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 01-06-2007 DIL © by SEMIKRON SK60GAL125 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 01-06-2007 DIL © by SEMIKRON SK60GAL125 UL recognized file no. E 63 532 5 01-06-2007 DIL © by SEMIKRON