SK60GB125_08

SK60GB125 Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP® 3 Inverse Diode IGBT Module SK60GB125 Module Preliminary Data Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications* GB 1 12-05-2008 DIL © by SEMIKRON SK60GB125 Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP® 3 IGBT Module SK60GB125 Preliminary Data This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Features Typical Applications* GB 2 12-05-2008 DIL © by SEMIKRON SK60GB125 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 12-05-2008 DIL © by SEMIKRON SK60GB125 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 12-05-2008 DIL © by SEMIKRON SK60GB125 UL recognized file no. E 63 532 5 12-05-2008 DIL © by SEMIKRON