SK71GB065TF

SK71GB065TF Absolute Maximum Ratings Symbol Conditions IGBT Values Units Inverse/Freewheeling Diode SEMITOP® 3 IGBT Module SK71GB065TF Target Data Characteristics Symbol Conditions IGBT min. typ. max. Units Features Inverse/Freewheeling Diode Typical Applications Mechanical data 1) GB - TF 1 09-02-2007 DIL © by SEMIKRON SK71GB065TF Fig.6 Typ. output characteristic, tp = 25 µs, Tj = 125 °C Fig.7 Turn-on / -off energy = f (IC) Fig.8 Turn-on / -off energy = f (RG) Fig.9 Typ. gate charge characteristic Fig.11 Typ. switching times vs. IC 2 09-02-2007 DIL © by SEMIKRON SK71GB065TF Fig.12 Typ. switching times vs. gate resistor RG Fig.14 FWD forward characteristic, Tj = 125°C Fig. 15 Typ. NTC characteristic 3 09-02-2007 DIL © by SEMIKRON SK71GB065TF UL Recognized File no. E 63532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 09-02-2007 DIL © by SEMIKRON