SK75GB12T4T

SK75GB12T4T Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP® 3 Inverse Diode IGBT Module SK75GB12T4 T Module Target Data Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications* Remarks GB-T 1 05-10-2009 DIL © by SEMIKRON SK75GB12T4T Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP® 3 IGBT Module SK75GB12T4 T Temperature sensor Target Data Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Typical Applications* Remarks GB-T 2 05-10-2009 DIL © by SEMIKRON SK75GB12T4T Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (Ts) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 05-10-2009 DIL © by SEMIKRON SK75GB12T4T Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 05-10-2009 DIL © by SEMIKRON SK75GB12T4T 5 05-10-2009 DIL © by SEMIKRON