SK80GB125T
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMITOP® 3 IGBT Module
SK80GB125T Module Preliminary Data Inverse Diode
Features
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Typical Applications
GB - T
1
21-02-2007 SCT
© by SEMIKRON
SK80GB125T
Characteristics Symbol Conditions Inverse Diode min. typ. max. Units
SEMITOP® 3 IGBT Module
SK80GB125T Temperature sensor Preliminary Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
Typical Applications
GB - T
2
21-02-2007 SCT
© by SEMIKRON
SK80GB125T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
21-02-2007 SCT
© by SEMIKRON
SK80GB125T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
21-02-2007 SCT
© by SEMIKRON
SK80GB125T
UL Recognized File no. E 63 532 Dimensions in mm
5
21-02-2007 SCT
© by SEMIKRON
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