SK85MH10T_08

SK 85 MH 10 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET Values Units Inverse diode SEMITOP 2 MOSFET Module SK 85 MH 10 T Preliminary Data Freewheeling CAL diode ® Features Characteristics Symbol Conditions MOSFET min. typ. max. Units Typical Applications* Inverse diode Free-wheeling diode Mechanical data MH - T 1 12-05-2008 DIL © by SEMIKRON SK 85 MH 10 T MOSFET,TRANSISTOR Fig. 3 Output characteristic, tp = 80 µs, Tj = 25 °C Fig. 4 Temperature Sensor Characteristic Fig. 5 Breakdown voltage vs. temperature Fig. 6 Typ. capacitancies vs. drain-source voltage Fig. 7 Gate charge characteristic, IDp = 80 A Fig. 8 Diode forward characteristic, tp = 80 µs 2 12-05-2008 DIL © by SEMIKRON SK 85 MH 10 T MOSFET,TRANSISTOR Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 3 12-05-2008 DIL © by SEMIKRON