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SKCD06C120IHD

SKCD06C120IHD

  • 厂商:

    SEMIKRON( 赛米控)

  • 封装:

  • 描述:

    SKCD06C120IHD - CAL-DIODE - Semikron International

  • 详情介绍
  • 数据手册
  • 价格&库存
SKCD06C120IHD 数据手册
SKCD 06 C 120 I HD Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM Tjmax Conditions Tj = 25 °C, IR = 0.1 mA Ts = 80 °C, Tj = 150 °C 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1200 8 60 55 150 Unit V A A A °C CAL-DIODE IF = 6 A VRRM = 1200 V Size: 2,44 mm x 2,44 mm SKCD 06 C 120 I HD Electrical Characteristics Symbol i2t IR VF V(TO) rT Conditions Tj = 150 °C, 10 ms, sin 180° Tj = 25 °C, VRRM = 1200 V Tj = 125 °C, VRRM = 1200 V Tj = 25 °C, IF = 5 A Tj = 125 °C, IF = 5 A Tj = 125 °C Tj = 125 °C min. typ. max. 15 0.10 Unit A2s mA mA V V V mΩ 1.50 1.50 0.92 119.8 1.77 1.77 Features • high current density • easy paralleling due to a small forward voltage spread • positive temperature coefficient • very soft recovery behavior • small switching losses • high ruggedness • compatible to thick wire bonding • compatible to standard solder processes Dynamic Characteristics Symbol trr trr Qrr Qrr Irrm Irrm Conditions Tj = 25 °C, 6 A, 600 V, 120 A/µs Tj = 125 °C, 6 A, 600 V, 120 A/µs Tj = 25 °C, 6 A, 600 V, 120 A/µs Tj = 125 °C, 6 A, 600 V, 120 A/µs Tj = 25 °C, 6 A, 600 V, 120 A/µs Tj = 125 °C, 6 A, 600 V, 120 A/µs min. typ. max. Unit µs ns µC 1.4 4.1 µC A A Typical Applications* • freewheeling diode for IGBT • particularly suitable for frequencies < 8 kHz Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-s) 10 min. 5 min. sold. on 0,38 mm DCB, reference point on copper heatsink close to the chip 2.46 Conditions min. -40 -40 typ. max. 150 150 250 320 Unit °C °C °C °C K/W Mechanical Characteristics Symbol Raster size Area total Anode Cathode Wire bond Package Chips / Package Conditions Values 2.44 x 2.44 5.95 bondable (Al) solderable (Ag/Ni) Al, diameter ≤ 500 µm wafer frame 1720 (5" Wafer) Unit mm2 mm2 pcs SKCD © by SEMIKRON Rev. 0 – 18.02.2010 1 SKCD 06 C 120 I HD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 2 Rev. 0 – 18.02.2010 © by SEMIKRON
SKCD06C120IHD
1. 物料型号: - 型号:SKCD 06 C 120 I HD

2. 器件简介: - 该器件是一个快速恢复二极管,具有高电流密度、易于并联、正温度系数、非常软的恢复行为、小的开关损耗、高鲁棒性、兼容粗线键合和标准焊接工艺等特点。

3. 引脚分配: - 阳极:可键合(Al) - 阴极:可焊接(Ag/Ni)

4. 参数特性: - 绝对最大额定值: - VRRM(反向重复峰值电压):1200V - IF(AV)(平均电流):8A(80°C时)/ 150°C时未给出具体数值 - IFSM(浪涌电流):60A(10ms) - Tjmax(最大结温):150°C - 电气特性: - i2t(浪涌电流耐受时间):15A²s(150°C,10ms,正弦波) - IR(反向电流):0.10mA(25°C,1200V) - VF(正向电压):1.50V(25°C,5A)/ 1.77V(125°C) - V(TO)(通态电压):0.92V(125°C) - IT(总电流):119.8mA(125°C)

5. 功能详解: - 该器件适用于IGBT的自由轮流通路,特别适用于频率小于8kHz的应用。

6. 应用信息: - 典型应用包括IGBT的自由轮流通路,尤其适合于频率低于8kHz的场合。

7. 封装信息: - 封装尺寸:2.44mm x 2.44mm - 总面积:5.95mm² - 封装类型:晶圆框架 - 每封装芯片数:1720(5英寸晶圆)
SKCD06C120IHD 价格&库存

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