SKDH116-L75

SKDH 116/..-L75 Absolute Maximum Ratings Symbol Conditions Bridge - Rectifier Values Units SEMIPONTTM 6 3-Phase Bridge Rectifier + IGBT braking chopper SKDH 116/..-L75 Preliminary Data IGBT - Chopper Freewheeling - CAL Diode Features Characteristics Symbol Conditions Diode - Rectifier min. typ. max. Units Typical Applications Thyristor - Rectifier IGBT - Chopper CAL - Diode - Freewheeling Temperature Sensor Mechanical data DH 1 18-10-2007 DIL © by SEMIKRON SKDH 116/..-L75 Fig. 1 Power dissipation per module vs. output current Fig. 2 Surge overload current vs. time Fig. 3 Forward characteristic of single rectifier diode Fig. 4 Forward characteristic of single thyristor Fig. 5 Temperature sensor characteristic Fig. 6 Typ. gate charge characteristic 2 18-10-2007 DIL © by SEMIKRON SKDH 116/..-L75 Fig. 7 Output IGBT characteristic Ic=f(Vce), Tj=25°C Fig. 8 Output IGBT characteristic Ic=f(Vce), Tj=125°C Fig. 9 Turn-on/-off energy=f(Ic) Fig. 10 Turn-on/-off energy=f(Rg) Fig. 11 Gate trigger characteristic of a single thyristor 3 18-10-2007 DIL © by SEMIKRON SKDH 116/..-L75 UL recognized File n° E63 532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 18-10-2007 DIL © by SEMIKRON