SKIM270GD176D_08

SKiM 270GD176D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SKiM® 5 IGBT Modules SKiM 270GD176D Preliminary Data Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Features Typical Applications* Inverse diode Thermal characteristics Temperature Sensor Mechanical data GD 1 24-11-2008 MAJ © by SEMIKRON SKiM 270GD176D Fig. 1 Output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG) Fig. 5 Transfer characteristic Fig. 6 Gate charge characteristic 2 24-11-2008 MAJ © by SEMIKRON SKiM 270GD176D Fig. 7 Switching times vs. IC Fig. 8 Switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Zthp(j-s) = f (tp); D = tp/tc = tp * f Fig. 10 Transient thermal impedance of FWD Zthp(j-s) = f (tp); D = tp/tc = tp * f Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE' 3 24-11-2008 MAJ © by SEMIKRON SKiM 270GD176D Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 4 24-11-2008 MAJ © by SEMIKRON