SKIM306GD12E4

SKiM306GD12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Ts = 25 °C Ts = 70 °C 1200 410 333 300 900 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Ts = 25 °C Ts = 70 °C 302 240 300 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 1620 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 700 -40 ... 125 2500 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SKiM® 63 Trench IGBT Modules SKiM306GD12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor VGES tpsc Tj IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Inverse diode Tj = 175 °C Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-s) Conditions IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 300 A RG on = 1  RG off = 1  di/dton = 6590 A/µs di/dtoff = 4000 A/µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C min. typ. 1.85 2.25 0.8 0.7 3.5 5.2 max. 2.10 2.45 0.9 0.8 4.0 5.5 6.5 0.3 Unit V V V V m m V mA mA nF nF nF nC  ns ns mJ ns ns mJ Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives VGE=VCE, IC = 12 mA Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 5 5.8 0.1 17.60 1.16 0.94 1700 2.5 252 44 19 506 70 39 0.116 K/W GD © by SEMIKRON Rev. 3 – 14.07.2011 1 SKiM306GD12E4 Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 300 A Tj = 150 °C di/dtoff = 8000 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 1.1 0.7 2.2 3.3 min. typ. 2.1 2.1 1.3 0.9 2.8 3.9 448 47 21 max. 2.5 2.4 1.5 1.1 3.2 4.3 Unit V V V V m m A µC mJ Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 SKiM® 63 Trench IGBT Modules SKiM306GD12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor IRRM Qrr Err Rth(j-s) Module LCE RCC'+EE' w 0.218 9 13 K/W nH m m g  K terminal-chip Ts = 25 °C Ts = 125 °C 0.3 0.5 761 Temperature sensor R100 B100/125 TSensor = 100 °C (R25 = 5 k) R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 339 4096 Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives GD 2 Rev. 3 – 14.07.2011 © by SEMIKRON SKiM306GD12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 14.07.2011 3 SKiM306GD12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 3 – 14.07.2011 © by SEMIKRON SKiM306GD12E4 SKIM 63 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 14.07.2011 5